Detailed calculations of transient effects in semiconductor injection lasers

Detailed calculations have been carried out of time delay andQ-switching effects in semiconductor lasers using a model described previously, incorporating saturable absorption and loss of optical confinement. The model has been extended to include the high-current limit on theQ-switching region and also the wavelength dependence of threshold current in grating-controlled lasers. In addition, the full rate equations for the electron concentrations in the lasing and absorbing states and for the photon concentration in the lasing mode have been solved by integration in the time domain using a Runge-Kutta numerical procedure. The results illustrate in a relatively simple form the complicated processes occurring during long time delays, abnormal time delays, andQ-switching.