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接触电阻和扭距序列作用下CICC耦合损耗模型
引用本文:蒋华伟,李战升,武松涛.接触电阻和扭距序列作用下CICC耦合损耗模型[J].电子学报,2014,42(5):953-957.
作者姓名:蒋华伟  李战升  武松涛
作者单位:1. 河南工业大学信息科学与工程学院, 河南郑州 450001; 2. 河南省邮电规划设计院, 河南郑州 450008; 3. 中国科学院等离子体物理研究所, 安徽合肥 230031
基金项目:国家973重点基础研究发展计划(No.2014GB105001);河南省教育厅科学技术研究重点项目(No.14A510005)
摘    要:国际热核试验反应堆ITER和国内今后要建造的聚变工程实验堆CFETR上的CICC导体,将运行在大电流快速励磁的瞬变复杂磁场中,这使得中心螺线CS磁体上的导体会遭受10T以上的磁场冲击,目前已采用铌三锡(Nb3Sn)材料,但应变对Nb3Sn导体临界性能退化作用的研究还在探索中,同时更缺乏导体绞缆级扭距序列和股线接触特性对耦合损耗影响的实验分析研究.为此,在周期载荷模拟应变情况下,开展了不同扭距序列和导体接触电阻对耦合损耗作用的探索.研究分析表明,相对于经典耦合损耗和频谱损耗计算模型,由导体扭距序列比和接触电阻作用组合分析模型,计算获得的耦合损耗误差较小,与测试值最接近.结果显示采用扭距序列比和接触电阻组合的计算方法能取得较满意效果.

关 键 词:接触电阻  扭距序列比  管内电缆导体  耦合损耗  
收稿时间:2013-04-01

Coupling Loss Model of CICC with Contact Resistance and Cabling Sequence
JIANG Hua-wei,LI Zhan-sheng,WU Song-tao.Coupling Loss Model of CICC with Contact Resistance and Cabling Sequence[J].Acta Electronica Sinica,2014,42(5):953-957.
Authors:JIANG Hua-wei  LI Zhan-sheng  WU Song-tao
Affiliation:1. Henan University of Technology, Zhengzhou, Henan 450001, China; 2. Henan Post & Telecom Planning and Designing Institute, Zhengzhou, Henan 450008, China; 3. Institute of Plasma Physics, Chinese Academy of Sciences, Hefei, Anhui 230031, China
Abstract:International thermal-nuclear experimental reactor and China fusion engineering testing reactor,to be built in the future,will run in the transient complex magnetic field with the large current quick exciting,which makes the conductor on the center spiral magnet suffer the impact of the magnetic field above 10 T.So,the Nb3Sn material has been used.However,for the Nb3Sn-based conductor,research of the critical performance degradation due to strain is still inadequate.Especially,it is lack of the experimental analysis study of the influence of the twist pitch and contact characteristics on coupling loss.Therefore,by simulating strain with the cycle load,the effect exploration of coupling loss is carried out with the different cabling sequence ratio and a contact resistance.Compared with calculation models of classical coupling loss and the spectrum loss,the coupling loss error with the combination model of conductor cabling sequence ratio and contact resistance is small,the combination model calculation is the closest to the measured value.The result shows that the calculation technology of the cabling sequence ratio and contact resistance can obtain satisfactory result.
Keywords:contact resistance  cabling sequence  cable-in-conduit conductor  coupling loss  
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