Investigation of deep level defects in copper irradiated bipolar junction transistor |
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Authors: | KV Madhu Ravi Kumar M Ravindra R Damle |
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Affiliation: | 1. Department of Physics, Jnanabharati, Bangalore University, Bangalore 560 056, India;2. Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067, India;3. Components Division, ICG, ISRO Satellite Centre, Bangalore 560 017, India |
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Abstract: | Commercial bipolar junction transistor (2N 2219A, npn) irradiated with 150 MeV Cu11+-ions with fluence of the order 1012 ions cm?2, is studied for radiation induced gain degradation and deep level defects. I–V measurements are made to study the gain degradation as a function of ion fluence. The properties such as activation energy, trap concentration and capture cross-section of deep levels are studied by deep level transient spectroscopy (DLTS). Minority carrier trap levels with energies ranging from EC ? 0.164 eV to EC ? 0.695 eV are observed in the base–collector junction of the transistor. Majority carrier trap levels are also observed with energies ranging from EV + 0.203 eV to EV + 0.526 eV. The irradiated transistor is subjected to isothermal and isochronal annealing. The defects are seen to anneal above 350 °C. The defects generated in the base region of the transistor by displacement damage appear to be responsible for transistor gain degradation. |
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