Comparison of contact resistance between accumulation-mode and inversion-mode multigate FETs |
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| Authors: | Chi-Woo Lee Dimitri Lederer Aryan Afzalian Ran Yan Nima Dehdashti Weize Xiong Jean-Pierre Colinge |
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| Affiliation: | 1. Tyndall National Institute, Lee Maltings, Prospect Row, Cork, Ireland;2. Texas Instruments Incorporation, SiTD, 13121 TI Boulevard, Dallas, TX, USA |
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| Abstract: | The performances of accumulation-mode and inversion-mode multigate FETs are compared. The influence of gate underlap on the electrical properties is analyzed. Both simulation results and experimental data show that in a device with gate underlap, accumulation-mode devices have a higher current drive, lower source and drain resistance and less process variability than inversion-mode FETs. |
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