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Characterization of CoxNiyO hybrid metal oxide nanoparticles as charge trapping nodes in nonvolatile memory devices |
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| Authors: | Chin-Lung Cheng Chien-Wei Liu Kuei-Shu Chang-Liao Ping-Hung Tsai Jin-Tsong Jeng Sung-Wei Huang Bau-Tong Dai |
| Affiliation: | 1. Institute of Mechanical and Electro-Mechanical Engineering, National Formosa University, Huwei, Yunlin 63201, Taiwan, ROC;2. Common Laboratories for Micro/Nano Science and Technology, National Formosa University, Huwei, Yunlin 63201, Taiwan, ROC;3. National Nano Device Laboratories, Tainan 74147, Taiwan, ROC;4. Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC;5. Department of Computer Science and Information Engineering, National Formosa University, Huwei, Yunlin 63201, Taiwan, ROC |
| Abstract: | The CoxNiyO hybrid metal oxide nanoparticles (HMONs) embedded in the HfOxNy high-k dielectric as charge trapping nodes of the nonvolatile memory devices have been formed via the chemical vapor deposition using the Co/Ni acetate calcined and reduced in the Ar/NH3 ambient. A charge trap density of 8.96 × 1011 cm?2 and a flatband voltage shift of 500 mV were estimated by the appearance of the hysteresis in the capacitance–voltage (C–V) measurements during the ±5 V sweep. Scanning electron microscopy image displays that the CoxNiyO HMONs with a diameter of ～10–20 nm and a surface density of ～1 × 1010 cm?2 were obtained. The mechanism related to the writing characteristics are mainly resulted from the holes trapping. Compared with those devices with the CoxNiyO HMONs formed by the dip-coated technique, memory devices with the CoxNiyO HMONs fabricated by the drop-coated technique show improved surface properties between the CoxNiyO HMONs and the HfON as well as electrical characteristics. |
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