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Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors |
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| Authors: | FH Ruddell SL Suder MF Bain JH Montgomery BM Armstrong HS Gamble D Denvir G Casse T Bowcock PP Allport J Marczewski K Kucharski D Tomaszewski H Niemiec W Kucewicz |
| Affiliation: | 1. Northern Ireland Semiconductor Research Centre, School of Electronics, Electrical Engineering and Computer Science, Queen’s University Belfast, Ashby Building, Stranmillis Road, Belfast BT9 5AH, UK;2. Andor Technology Ltd., 7 Millenium Way, Springvale Business Park, Belfast BT12 7AL, UK;3. Liverpool Semiconductor Detector Centre, Department of Physics, University of Liverpool, Liverpool L69 7ZE, UK;4. Institute of Electron Technology, Lotnikow 32/46, 02-668 Warsaw, Poland;5. Institute of Electronics, AGH – University of Science and Technology, Mickiewicza 30, 30-059 Cracow, Poland |
| Abstract: | Silicon on insulator (SOI) substrates offer a promising platform for monolithic high energy physics detectors with integrated read-out electronics and pixel diodes. This paper describes the fabrication and characterisation of specially-configured SOI substrates using improved bonded wafer ion split and grind/polish technologies. The crucial interface between the high resistivity handle silicon and the SOI buried oxide has been characterised using both pixel diodes and circular geometry MOS transistors. Pixel diode breakdown voltages were typically greater than 100 V and average leakage current densities at 70 V were only 55 nA/cm2. MOS transistors subjected to 24 GeV proton irradiation showed an increased SOI buried oxide trapped charge of only 3.45 × 1011 cm?2 for a dose of 2.7 Mrad. |
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