Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs |
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Authors: | Marcelo Antonio Pavanello Joao Antonio Martino Eddy Simoen Rita Rooyackers Nadine Collaert Cor Claeys |
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Affiliation: | 1. Department of Electrical Engineering, Centro Universitário da FEI, Av. Humberto de Alencar Castelo Branco, 3972, 09850-901 São Bernardo do Campo, Brazil;2. LSI/PSI/EPUSP, University of São Paulo, Av. Prof. Luciano Gualberto, trav. 3 n. 158, 05508-900 Sao Paulo, Brazil;3. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;4. E.E. Department, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium |
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Abstract: | This work shows a comparison between the analog performance of standard and strained Si n-type triple-gate FinFETs with high-κ dielectrics and TiN gate material. Different channel lengths and fin widths are studied. It is demonstrated that both standard and strained FinFETs with short channel length and narrow fins have similar analog properties, whereas the increase of the channel length degrades the early voltage of the strained devices, consequently decreasing the device intrinsic voltage gain with respect to standard ones. Narrow strained FinFETs with long channel show a degradation of the Early voltage if compared to standard ones suggesting that strained devices are more subjected to the channel length modulation effect. |
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