InAs-based heterostructure barrier varactor diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material |
| |
Authors: | James G Champlain Richard Magno Mario Ancona Harvey S Newman J Brad Boos |
| |
Affiliation: | Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, United States |
| |
Abstract: | InAs-based heterostructure barrier varactor (HBV) diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material are demonstrated. Current–voltage and capacitance–voltage characteristics, as well as S-parameters, of HBV diodes with varying barrier thicknesses are examined. Maximum capacitance values and maximum-to-minimum capacitance ratios greater than those predicted by traditional HBV models were measured. The HBVs’ unconventional behavior in terms of charge accumulation layers adjacent to the wide bandgap barrier is discussed. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|