Spannungsanisotropie und Struktur von TiN-Schichten

Stress anisotropy and structure of TiN thin films In many sputtering processes the substrate is rotated or periodically moved with respect to the target in order to obtain a homogeneous film deposition. In that case anisotropic conditions of film growth exist which lead to anisotropic mechanical stresses. The stress anisotropy depends on the carrier velocity and can be attributed to the film structure. The stress measurements, therefore, will be related to measurements of composition by SNMS, to determination of stoichiometry by ellipsometry and to investigations of structure by X-ray diffraction.