A role of parameters in RF PA CVD technology of a-C:N:H layers

Results concerning influence of radio-frequency plasma-assisted chemical vapor deposition (RF PA CVD; 13.56 MHz) processing parameters on a-C:N:H layer deposition are presented in this work. The following parameters have been taken into consideration: substrate temperature, plasma RF generator power, composition of reactive gas mixture, gas pressure and time of deposition. A special interest has been focused on the deposition rate as well as on the structure and chemical composition of layers. The layer thicknesses have been measured and deposition rates evaluated. Structure analysis has been performed with application of FT-IR spectroscopy. The obtained results may serve as a basis in the design of the technology of a-C:N:H layers for various applications.