Electrical and reliability characteristics of an ultrathin TaO/sub x/N/sub y/ gate dielectric prepared by ND/sub 3/ annealing of Ta/sub 2/O/sub 5/ |
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| Authors: | Hyungsuk Jung Kiju Im Dooyoung Yang Hyunsang Hwang |
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| Affiliation: | Dept. of Mater. Sci. & Eng., Kwangju Inst. of Sci. & Technol., South Korea; |
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| Abstract: | This letter describes a unique process for the preparation of high quality tantalum oxynitride (TaO/sub x/N/sub y/) via the ND/sub 3/ annealing of Ta/sub 2/O/sub 5/, for use in gate dielectric applications. Compared with tantalum oxide (Ta/sub 2/O/sub 5/), a significant improvement in the dielectric constant was obtained by the ammonia treatment followed by light reoxidation in a wet ambient. We were able to confirm nitrogen incorporation in the tantalum oxynitride (TaO/sub x/N/sub y/) by Auger electron spectroscopy. Compared with NH/sub 3/ nitridation, tantalum oxynitride prepared by nitridation in ND/sub 3/ shows less charge trapping and larger charge-to-breakdown characteristics. |
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