A wide-dynamic-range, high-transimpedance Si bipolar preamplifierIC for 10-Gb/s optical fiber links |
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| Authors: | Ohhata K Masuda T Imai K Takeyari R Washio K |
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| Affiliation: | Hitachi Device Eng. Co. Ltd., Tokyo; |
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| Abstract: | A wide-dynamic-range, high-transimpedance preamplifier IC for 10-Gb/s optical fiber links was developed using a 0.3-μm Si bipolar process. The preamplifier with a limiting amplifier enables a wide dynamic range from 16 μApp to 2.5 mApp and a high transimpedance of 1 kΩ (2 kΩ in the differential output mode). Moreover, careful circuit design achieves a transimpedance fluctuation of 0.5 dBR and an average equivalent input noise current density of 12 pA/√Hz. This preamplifier IC has the highest transimpedance of any Si bipolar preamplifier for 10-Gb/s operation. Thus, the preamplifier is suitable for 10-Gb/s short-haul optical fiber links and can be used to provide a low-cost system |
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