| Si IGBT/SiC MOSFET混合器件及其应用研究 |
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| 引用本文： | 李宗鉴,王俊,江希,何志志,彭子舜,余佳俊.Si IGBT/SiC MOSFET混合器件及其应用研究[J].电源学报,2020,18(4):58-70. |
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| 作者姓名： | 李宗鉴 王俊 江希 何志志 彭子舜 余佳俊 |
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| 作者单位： | 湖南大学电气与信息工程学院,湖南大学,湖南大学,湖南大学,湖南大学,湖南大学 |
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| 基金项目： | 国家自然科学基金资助项目（51977064） |
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| 摘 要： | 综述了Si IGBT/SiC MOSFET混合器件在门极优化控制策略、集成驱动设计、热电耦合损耗模型、芯片尺寸配比优化和混合功率模块研制等方面的最新研究成果与进展。Si IGBT/SiC MOSFET混合器件结合了SiC MOSFET的高开关频率、低开关损耗特性和Si IGBT的大载流能力和低成本优势,已有文献的最新研究和实验结果验证了该类器件的优异特性,表明其对高性能电力电子器件实现更高电流容量、更高开关频率和较低成本具有重要意义,是高性能变换器应用中非常有潜力的功率器件类型。
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| 关 键 词： | SiC MOSFET Si IGBT 混合器件 损耗模型 功率模块 |
| 收稿时间： | 2020/4/14 0:00:00 |
| 修稿时间： | 2020/7/27 0:00:00 |
Si IGBT/SiC MOSFET Hybrid Switch and Its Applications |
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| LI Zongjian,WANG Jun,JIANG Xi,HE Zhizhi,PENG Zishun and YU Jiajun.Si IGBT/SiC MOSFET Hybrid Switch and Its Applications[J].Journal of power supply,2020,18(4):58-70. |
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| Authors: | LI Zongjian WANG Jun JIANG Xi HE Zhizhi PENG Zishun and YU Jiajun |
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| Affiliation: | Hunan University,Hunan University,,,, |
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| Abstract: | This paper summarizes the latest research achievements and progress of Si IGBT / SiC MOSFET hybrid switch in gate optimization control strategy, integrated drive design, thermoelectric coupling loss model, chip size ratio optimization and hybrid power module development. The Si IGBT / SiC MOSFET hybrid device combines the high switching frequency, low switching loss characteristics of SiC MOSFET and the large current carrying capacity and low cost advantages of Si IGBT. The latest research and experimental results have verified the excellent characteristics of this type of device. It is of great significance to achieve higher current capacity, higher switching frequency and lower cost of high-performance power electronic devices. It is a type of power device with high potential in high-performance converter applications. |
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| Keywords: | SiC MOSFET Si IGBT hybrid device loss model power module |
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