无压低温烧结纳米银封装电力电子器件的进展与思考

无压低温银烧结技术是高功率密度SiC器件的无铅化关键互连技术,对SiC功率模块的可靠性提升具有重要的意义。针对典型Si基功率模块封装连接工艺及其可靠性,阐述了当前无压低温纳米银烧封装技术的进展与思考:(1)讨论了电力电子器件封装连接可靠性的典型风险和原因;(2)介绍了无压低温连接技术的最新发展;(3)基于Si基典型功率模块封装向高可靠SiC功率模块转变过程中在封装结构和材料方面的需求,阐述了无压低温银烧结技术在引线型、平面型和双面冷却功率模块封装方面的进展;(4)提出无压低温银烧结技术当前有待解决的技术难题。

Progress and Considerations on Pressure-less Low-temperature Sintering of Nano-silver for Packaging Power Electronic Devices

The low-pressure low-temperature silver sintering technology is a key interconnection technology for lead-free high-density SiC devices. It has important significance for the reliability improvement of SiC power modules. Aiming at the typical silicon-based power module packaging connection process and its reliability, this article expounds the current progress and considerations of the low-voltage low-temperature nano-silver burning packaging technology: (1) discusses the typical risks and causes of power electronic device packaging connection reliability; ( 2) Introduced the latest development of pressureless low temperature connection technology (3) Based on the requirements of packaging structure and materials in the process of transition from typical silicon-based power module packaging to high-reliability SiC power module, elaborated the pressureless low temperature silver sintering technology in the lead Progress in the packaging of power modules with flat, flat, and double-sided cooling; (4) Proposed technical problems that need to be solved in the low-pressure low-temperature silver sintering technology.