| 采用SiC MOSFET与Si MOSFET的双有源桥效率仿真分析对比 |
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| 引用本文： | 刘昌赫,王学远. 采用SiC MOSFET与Si MOSFET的双有源桥效率仿真分析对比[J]. 电源学报, 2020, 18(4): 109-115 |
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| 作者姓名： | 刘昌赫 王学远 |
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| 作者单位： | 同济大学新能源汽车工程中心,同济大学新能源汽车工程中心 |
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| 摘 要： | 通过搭建单管效率仿真模型,从功率损耗角度分析SiC MOSFET相较Si MOSFET的优势。此后结合Ansoft Maxwell有限元分析,建立了适用于给定工况下效率仿真的变压器等效模型。基于双有源桥双向DC-DC拓扑进行效率仿真,对比不同开关频率相同输入输出工况下全负载范围内二者效率差别,总结SiC MOSFET优势所在与适用工况范围。
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| 关 键 词： | 双有源桥 仿真分析 SiC MOSFET |
| 收稿时间： | 2018-08-03 |
| 修稿时间： | 2020-01-11 |
Simulation Analysis and Comparison of Dual Active Bridge Efficiency Based on SiC and Si MOSFET |
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| LIU Changhe and WANG Xueyuan. Simulation Analysis and Comparison of Dual Active Bridge Efficiency Based on SiC and Si MOSFET[J]. Journal of Power Supply, 2020, 18(4): 109-115 |
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| Authors: | LIU Changhe and WANG Xueyuan |
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| Affiliation: | Clean Energy Automotive Engineering Center, |
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| Abstract: | By building a single-tube efficiency simulation model, the advantages of SiC MOSFETs compared to Si MOSFETs are analyzed from the per-spective of power dissipation. Combining with Ansoft Maxwell finite element analysis, an equivalent model of the transformer suitable for effi-ciency simulation under a given operating condition was established. The efficiency simulation was performed based on the dual active bridge bi-directional DC-DC topology, and the efficiency difference was compared under different condition. |
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| Keywords: | dual active bridge simulation SiC MOSFET |
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