| 运用两步曝光法减小纳米间隔纳米柱制备中的邻近效应 |
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| 引用本文： | 张杨,张仁平,韩伟华,刘剑,杨香,王颖,李千秋,杨富华.运用两步曝光法减小纳米间隔纳米柱制备中的邻近效应[J].半导体学报,2009,30(11):116001-4. |
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| 作者姓名： | 张杨 张仁平 韩伟华 刘剑 杨香 王颖 李千秋 杨富华 |
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| 摘 要： | A two-step exposure method to effectively reduce the proximity effect in fabricating nanometer-spaced nanopillars is presented. In this method, nanopillar patterns on poly-methylmethacrylate （PMMA） were partly crosslinked in the first-step exposure. After development, PMMA between nanopillar patterns was removed, and hence the proximity effect would not take place there in the subsequent exposure. In the second-step exposure, PMMA masks were completely cross-linked to achieve good resistance in inductively coupled plasma etching. Accurate pattern transfer of rows of nanopillars with spacing down to 40 nm was realized on a silicon-on-insulator substrate.
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| 关 键 词： | 邻近效应 曝光方法 纳米 制造 聚甲基丙烯酸甲酯 电感耦合等离子体 间隔 有机玻璃 |
| 收稿时间： | 4/28/2009 4:17:11 PM |
| 修稿时间： | 6/12/2009 5:02:53 PM |
Reduction of proximity effect in fabricating nanometer-spaced nanopillars by two-step exposure |
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| Zhang Yang,Zhang Renping,Han Weihu,Liu Jian,Yang Xiang,Wang Ying,Li Chian Chiu and Yang Fuhua.Reduction of proximity effect in fabricating nanometer-spaced nanopillars by two-step exposure[J].Chinese Journal of Semiconductors,2009,30(11):116001-4. |
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| Authors: | Zhang Yang Zhang Renping Han Weihu Liu Jian Yang Xiang Wang Ying Li Chian Chiu and Yang Fuhua |
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| Affiliation: | State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China;Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, China;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 10083, China; Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy o |
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| Abstract: | A two-step exposure method to effectively reduce the proximity effect in fabricating nanometer-spaced nanopillars is presented. In this method, nanopillar patterns on poly-methylmethacrylate (PMMA) were partly cross-linked in the first-step exposure. After development, PMMA between nanopillar patterns was removed, and hence the proximity effect would not take place there in the subsequent exposure. In the second-step exposure, PMMA masks were completely cross-linked to achieve good resistance in inductively coupled plasma etching. Accurate pattern transfer of rows of nanopillars with spacing down to 40 nm was realized on a silicon-on-insulator substrate. |
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| Keywords: | nanopillars electron-beam lithography negative PMMA proximity effect |
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