首页 | 本学科首页   官方微博 | 高级检索  
     


The influence of grain-boundary segregation of Y in Cr2O3 on the oxidation of Cr metal
Authors:C. M. Cotell  G. J. Yurek  R. J. Hussey  D. F. Mitchell  M. J. Graham
Affiliation:(1) H. H. Uhlig Corrosion Laboratory, Massachusetts Institute of Technology, 02139 Cambridge, Massachusetts;(2) National Research Council of Canada, K1A OR6 Ottawa, Ontario, Canada;(3) Present address: Naval Research Laboratory, 20375-5000 Washington, D.C.;(4) Present address: American Superconductor Corporation, 02172 Watertown, Massachusetts
Abstract:The oxidation behavior at 900°C of pure Cr and Cr implanted with 2×1016 Y ions/cm2 was studied. The kinetics of oxidation were measured thermogravimetrically and manometrically. The mechanisms of oxide growth were studied using18O-tracer oxidation experiments, and the composition and microstructure of the oxide scales were characterized by TEM and STEM. Segregation of Y cations at Cr2O3 grain boundaries was found to be the critical factor governing changes in the oxidation behavior of Cr upon the addition of Y. In the absence of Y, pure Cr oxidized by the outward diffusion of cations via grain boundaries in the Cr2O3 scale. When Y was present at high concentration in the scale, as when Cr implanted with 2×1010 Y ions/cm2 was oxidized, anion diffusion predominated. It is concluded that strain-induced segregation of Y at grain boundaries in the oxide reduced the cation flux along the grain boundaries. The rate of oxidation was reduced because the grain-boundary diffusivity of cations became lower than the grain-boundary diffusivity of the anions, which then controlled the rate of oxidation. Changes in the relative rates of Cr3+ and O2– transport, as well as a solute-drag effect exerted by Y on the oxide grain boundaries, resulted in changes in the microstructure of the oxide.
Keywords:oxidation mechanisms  grain-boundary segregation  Cr2O3  18O/SIMS  yttrium implantation  reactive-element effect
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号