Status and application of HgCdTe device modeling

In this article, device modeling refers to numerical simulation of semiconductor device physics to predict electrical behavior. The silicon integrated circuit industry provides the example for the use of technology computer-aided design to simulate wafer fabrication processes, and the electrical performance of devices and circuits. This paper first reviews semiconductor device modeling in general, then as applied in work supporting the development and analysis of HgCdTe infrared detectors. Example applications of one- and two-dimensional device modeling are simulation of a bias-selectable, integrated two-color detector, and two-dimensional effects on the spectral response of a HgCdTe detector with composition grading.