| 门极电压控制IGBT并联时静态均流可行性研究 |
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| 引用本文： | 赵宏涛,吴峻,常文森.门极电压控制IGBT并联时静态均流可行性研究[J].电力电子技术,2007,41(9):101-103. |
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| 作者姓名： | 赵宏涛 吴峻 常文森 |
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| 作者单位： | 国防科技大学,湖南,长沙,410073;国防科技大学,湖南,长沙,410073;国防科技大学,湖南,长沙,410073 |
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| 摘 要： | IGBT并联时需要解决静态均流问题.通过对IGBT输出特性曲线的分析和对IGBT单管及模块的并联实验,阐明了通过控制门极电压来调节IGBT并联时静态均流的机制,进而分析了该机制的可行性.
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| 关 键 词： | 并联 可行性/绝缘栅双极晶体管 |
| 文章编号： | 1000-100X（2007）09-00101-03 |
| 修稿时间： | 2007-05-14 |
Research on the Feasibility of Balancing On-state Current for paralleled IGBTs by Controlling Gate Voltage |
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| ZHAO Hong-tao,WU Jun,CHANG Wen-sen.Research on the Feasibility of Balancing On-state Current for paralleled IGBTs by Controlling Gate Voltage[J].Power Electronics,2007,41(9):101-103. |
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| Authors: | ZHAO Hong-tao WU Jun CHANG Wen-sen |
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| Affiliation: | National University of Defence and Technology, Changsha 410073, China |
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| Abstract: | On-state current imbalance is a problem when Insulated Gate Bipolar Transistors(IGBTs) are connected in parallel.The Analysis of IGBT's output character curves along with some experiments on single IGBT chips and IGBT modules are presented to clarify the mechanism of balancing on-state current for paralleled IGBTs by controlling gate voltage.Then the feasibility of this mechanism is discussed. |
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| Keywords: | parallel feasibility / insulated gate bipolar transistor |
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