Leakage current mechanism in sub-micron polysilicon thin-filmtransistors |
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Authors: | Olasupo K.R. Hatalis M.K. |
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Affiliation: | AT&T Bell Labs., Allentown, PA; |
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Abstract: | We have studied leakage current in sub-micron p-channel polysilicon thin-film-transistor. Our study revealed that thermionic emission is the dominant mechanism at low drain bias (-0.1 V) while thermionic field emission dominate at moderately high drain bias. At high drain bias (>-5.0 V), tunneling was observed to be the dominant leakage mechanism |
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