Energy levels, oscillator strengths and transition probabilities for Si-like P II, S III, Cl IV, Ar V and K VI期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Energy levels, oscillator strengths and transition probabilities for Si-like P II, S III, Cl IV, Ar V and K VI

Authors:	A. Abou El-Maaref M.A.M. UosifS.H. Allam Th.M. El-Sherbini

Affiliation:	^a Physics Department, Faculty of Science, Al-Azhar University, Assuit, Egypt ^b Laboratory of Lasers and New Materials, Physics Department, Faculty of Science, Cairo University, Giza, Egypt

Abstract:	Fine-structure calculations of energy levels, oscillator strengths, and transition probabilities for transitions among the terms belonging to 3s²3p², 3s3p³, 3s²3p3d, 3s²3p4s, 3s²3p4p, 3s²3p4d, 3s²3p5s and 3s²3p5p configurations of silicon-like ions P II, S III, Cl IV, Ar V and K VI have been calculated using configuration-interaction version 3 (CIV3). We compared our data with the available experimental data and other theoretical calculations. Most of our calculations of energy levels and oscillator strengths (in length form) show good agreement with both experimental and theoretical data. Lifetimes of the excited levels are also given.

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