InAlAs/InGaAs HBTs with simultaneously high values of F/sub /spl tau// and F/sub max/ for mixed analog/digital applications |
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| Authors: | Betser Y Scott D Mensa D Jaganathan S Mathew T Rodwell MJ |
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| Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA; |
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| Abstract: | We report the design, fabrication, and measurement of InAlAs/InGaAs heterostructure bipolar transistors (HBTs) designed for high speed digital circuits. At 0.96 V V/sub CE/ the current gain cutoff frequency, f/sub /spl tau//, is 300 GHz and the maximum frequency of oscillation, f/sub max/, is 235 GHz. This value of f/sub /spl tau//, is the highest reported for bipolar transistors. At a slightly higher V/sub CE/ bias, a high value of 295 GHz for f/sub /spl tau// and f/sub max/ were obtained simultaneously. |
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