Electrical Characteristics of <Emphasis Type="Italic">n</Emphasis>-ZnO/<Emphasis Type="Italic">p</Emphasis>-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures |
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Authors: | RS Ajimsha MK Jayaraj LM Kukreja |
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Affiliation: | (1) Optoelectronics Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi, 682022, India;(2) Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore, 452013, India |
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Abstract: | Heterojunction diodes of n-type ZnO/p-type silicon (100) were fabricated by pulsed laser deposition of ZnO films on p-Si substrates in oxygen ambient at different pressures. These heterojunctions were found to be rectifying with a maximum
forward-to-reverse current ratio of about 1,000 in the applied voltage range of −5 V to +5 V. The turn-on voltage of the heterojunctions
was found to depend on the ambient oxygen pressure during the growth of the ZnO film. The current density–voltage characteristics
and the variation of the series resistance of the n-ZnO/p-Si heterojunctions were found to be in line with the Anderson model and Burstein-Moss (BM) shift. |
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Keywords: | Heterojunctions ZnO p-Si pulsed laser deposition |
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