| RIE对巨磁电阻自旋阀磁性能的影响 |
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| 引用本文： | 曲炳郡,任天令,刘华瑞,刘理天,李志坚,库万军.RIE对巨磁电阻自旋阀磁性能的影响[J].功能材料与器件学报,2004,10(3):343-346. |
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| 作者姓名： | 曲炳郡 任天令 刘华瑞 刘理天 李志坚 库万军 |
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| 作者单位： | 清华大学微电子学研究所,北京,100084;深圳华夏磁电子公司,深圳,518081 |
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| 摘 要： | 对巨磁电阻自旋阀磁场传感器制作中的关键技术之一：自旋阀薄膜的反应离子刻蚀(RIE)工艺，进行了试验研究。自旋阀结构为：Ta(3．5nm)／Cu(0．7nm)／NiFe(4．5nm)／CoFe(1nm)／Cu(3nm)／CoFe(2nm)／Ru(0．7nm)／CoFe(2nm)／MnIr(8nm)／Ta(4nm)，刻蚀气体为氢氯碳氟化合物(HCFC：Hydro—chloro—fluoro—carbon)，气体流量为10．5seem，RF功率为180W，时间为27min。结果表明：RIE技术可以加工出理想的巨磁电阻自旋阀薄膜图形，且加工过程对自旋阀的磁性能影响不大，这些结果对于巨磁电阻自旋阀型集成磁传感器的批量制作具有积极意义。
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| 关 键 词： | 巨磁电阻 RIE 自旋阀 |
| 文章编号： | 1007-4252(2004)03-0343-04 |
| 修稿时间： | 2003年11月7日 |
Influence of reactive ion etching process on magnetic properties of giant magnetoresistive spin valve |
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| QU Bing-jun,REN Tian-ling,LIU Hua-rui,LIU Li-tian,LI Zhi-jian,KU Wan-jun.Influence of reactive ion etching process on magnetic properties of giant magnetoresistive spin valve[J].Journal of Functional Materials and Devices,2004,10(3):343-346. |
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| Authors: | QU Bing-jun REN Tian-ling LIU Hua-rui LIU Li-tian LI Zhi-jian KU Wan-jun |
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| Affiliation: | QU Bing-jun1,REN Tian-ling1,LIU Hua-rui1,LIU Li-tian1,LI Zhi-jian1,KU Wan-jun2 |
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| Abstract: | Reactive ion etching (RIE) process utilized to form giant magnetoresistive (GMR) spin valve sensing elements was investigated experimentally. The spin valve has a structure of Ta(3.5nm)/Cu(0.7nm)/NiFe(4.5nm)/CoFe(1nm)/Cu(3nm)/CoFe(2nm)/Ru(0.7nm)/CoFe(2nm)/MnIr(8nm)/Ta(4nm). Using Hydrochlorofluorocarbon (HCFC) gas at a flow speed of 10.5 sccm, the good patternsare obtained at RF power of 180 W for 27 min, and the magnetic properties of spin valve are changedonly minutely during RIE process. The results should be positive for manufacture of integrated magnetic sensors based on GMR effect. |
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| Keywords: | GMR RIE spin valve |
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