Influence of ion-induced interfacial chemical reactivity on contact resistance |
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Authors: | S T Lakshmikumar |
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Affiliation: | (1) National Physical Laboratory, Dr K S Krishnan Road, 110 012 New Delhi, India |
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Abstract: | Contact resistance measurements of chromium contacts deposited by partially ionized beam deposition on transparent conducting
indium tin oxide (ITO) were performed. These provide a direct experimental evidence of the influence of interfacial chemical
interaction on the contact resistance. The interfacial reactivity is controlled by modifying the energy and flux of ionized
chromium atoms deposited on ITO employing a specially designed partially ionized deposition system with very high ionization
efficiency. The true contact resistivityρ
c is obtained by iteratively correcting the experimentally measured values for the finite sheet resistance of the ITO layer.ρ
c decreases linearly with the energy of the ionized chromium. Auger sputter profiling shows no structural modifications at
the interface due to a change in the energy of the chromium atoms, confirming that the observed change in the contact resistivity
is directly related to interfacial chemical bonding of the atoms with the oxygen atoms in the ITO leading to a local increase
of carrier concentration and lower interfacial resistance. |
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Keywords: | Chromium contacts beam deposition |
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