Switched-mode RF and microwave parallel-circuit Class E power amplifiers |
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Authors: | Andrei Grebennikov |
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Affiliation: | M/A-COM Eurotec Operations, Loughmahon Technology Park, Skehard Road, Blackrock, Cork, Ireland |
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Abstract: | The parallel-circuit Class E tuned power amplifiers with load networks consisting of either one capacitance and one inductor or a parallel LC circuit and series filter are described and analyzed. The elements of the load networks are defined using the same analytical approach with a set of the exact design equations. The ideal collector voltage and current waveforms for both configurations demonstrate a possible 100% efficiency and do not overlap. RF and microwave applications are demonstrated based on the simulation and experimental results of low-voltage InGaP/GaAs HBT and high-voltage LDMOSFET power amplifiers. These switched-mode parallel-circuit Class E power amplifiers offer a new challenge for RF and microwave power amplification by providing high-efficiency operating conditions. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 14, 21–35, 2004. |
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Keywords: | parallel-circuit Class E mode transmission-line load network switching time |
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