Comparison of the effectiveness of four linearizing techniques used in SiGe HBT LNA at 1900 MHz and low-bias voltage |
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| Authors: | José Alfredo Tirado-Méndez Flavio Iturbide-Sánchez Oleg Golovin Hildeberto Jardón-Aguilar |
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| Affiliation: | 1. Center of Research and Advanced Studies of IPN, Av. IPN 2508, México, D.F., México, 07360;2. University of Massachusetts at Amherst, Amherst, MA 01003;3. MTUSI, Avyamotornaya, dom 8, Moscow, Russia |
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| Abstract: | In this article, four linearizing techniques are compared with each other when they are used in a common-emitter SiGe HBT LNA. Finally, when all of them are employed together, improved linearity of the LNA is observed and more than 10 dBm of IIP3 and −5 dBm of 1-dB gain input compression point are realized when the circuit is fed with 2.4 V. © 2004 Wiley Periodicals, Inc. Int J RF and Microwave CAE 14, 144–152, 2004. |
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| Keywords: | linearity LNA low-level voltage HBT IIP3 |
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