a-Si:H TFTs using low-temperature CVD of Si/sub 3/H/sub 8/ |
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| Authors: | Breddels P.A. Kanoh H. Sugiura O. Matsumura M. |
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| Affiliation: | Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan; |
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| Abstract: | a-Si:H layers have been deposited by chemical vapour deposition (CVD) at 350 degrees C using Si/sub 3/H/sub 8/ as the source gas. Inverted staggered gate thin-film transistors (TFTs) were fabricated with plasma-CVD-grown SiN/sub x/ as the gate insulator. Electron field-effect mobilities of 0.45 cm/sup 2//Vs were obtained and the on/off ratio in the drain current was 10/sup 6/.<> |
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