Alkoxide precursors for controlled oxygen incorporation during metalorganic vapor phase epitaxy GaAs and AlxGa1−xAs growth |
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| Authors: | J. W. Huang D. F. Gaines T. F. Kuech R. M. Potemski F. Cardone |
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| Affiliation: | (1) Department of Chemical Engineering, University of Wisconsin, 53706 Madison, WI;(2) Department of Chemistry, University of Wisconsin, 53706 Madison, WI;(3) IBM T. J. Watson Research Center, 10598 Yorktown Heights, NY |
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| Abstract: | Controlled oxygen incorporation in GaAs using Al-0 bonding based precursors, dimethyl aluminum methoxide (DMALO) and diethyl aluminum ethoxide (DEALO), is presented in this investigation. A comparison study of oxygen incorporation kinetics between nominally undoped AlxGa1−xAs using trimethyl aluminum and DMALO-doped GaAs suggests that DMALO is one of the most important oxygen-bearing agents responsible for unintentional oxygen incorporation in AlxGa1−xAs. Controlled oxygen doping using DEALO is reported for the first time. Oxygen incorporation behavior, especially on the effect of the V/III ratio, was found to be quite different from the case of DMALO, mainly due to the differences between methyl- and ethyl-based growth chemistries. Physical, electrical, and optical properties of these oxygen-doped GaAs are also reported. |
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| Keywords: | AlxGa1− xAs deep levels doping growth chemistry metalorganic vapor phase epitaxy (MOVPE) oxygen |
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