| SiO_2上InP薄膜的连续Ar~+激光再结晶 |
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| 引用本文： | 林成鲁,朱青.SiO_2上InP薄膜的连续Ar~+激光再结晶[J].中国激光,1986,13(10):646-649. |
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| 作者姓名： | 林成鲁 朱青 |
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| 作者单位： | 中国科学院上海冶金所
(林成鲁)，中国科学院上海冶金所(朱青) |
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| 摘 要： | 在SiO_2绝缘层上用高频溅射法淀积一层InP薄膜。经过连续Ar~+激光再结晶以后,晶粒尺寸明显增大。利用离子背散射分析了激光再结晶前后InP化学计量比的变化,结果表明:采用SiO_2保护膜后较好地抑制了InP组分的分解。对A~+激光辐照引起的InP再结晶的机制进行了分析。
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| 收稿时间： | 1985/7/1 |
CW Ar+ laser recrystallization of inP films on SiO2 |
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| Abstract: | Polyeystalline InP films are deposited on SiO2 insulating substrate using a conventional EF sputtering equipment. The experimental results show a significant increase in grain size after Ar+ laser irradiation. Analysis of the stoichiometrical rate of InP by Rutherford backscattering spectrometry shows that the decomposition of InP is greatly suppressed by using a SiO2 encapsulant. Theoretical discussion on the recrystallization mechanism under Ar+ laser irradiation is presented. |
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