GaAs/AlGaAs grating surface-emitting diode lasers on Si substrates |
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| Authors: | Connolly J. Dinkel N. Menna R. Andrews J. |
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| Affiliation: | David Sarnoff Res. Center, Princeton, NJ, USA; |
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| Abstract: | A monolithic grating surface-emitting, GaAs/AlGaAs, separate-confinement-heterostructure, single-quantum-well diode laser has been fabricated on a Si substrate using a single-step metalorganic chemical vapour deposition process. An output power of 30 mW has been obtained under pulsed operation with a peak emission wavelength of 885 nm.<> |
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