Some low-leakage properties of silicon junction field-effect transistors |
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Authors: | Ettinger GM |
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Affiliation: | G. & E. Bradley Ltd., London, UK; |
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Abstract: | Factors governing the direct gate current in silicon field-effect transistors are reviewed, and a mode of operation which results in zero d.c. gate leakage is described. This leads to the postulation of a new d.c. equivalent circuit for the field-effect-transistor gate. |
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