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| 低温生长GaAs实现半导体泵浦红外激光器被动调Q锁模研究 | |
| 引用本文： | 姜其畅,卓壮,李健,程文雍,王勇刚,马骁宇,张志刚,王清月.低温生长GaAs实现半导体泵浦红外激光器被动调Q锁模研究[J].红外,2005(4):1-4,37. |
| 作者姓名： | 姜其畅 卓壮 李健 程文雍 王勇刚 马骁宇 张志刚 王清月 |
| 作者单位： | 1. 山东师范大学物理与电子科学学院,济南,250014;山大鲁能科技有限责任公司,济南,250014 2. 中国科学院半导体研究所,北京,100083;天津大学精密仪器与光电子工程学院超快激光实验室,天津,300072 3. 中国科学院半导体研究所,北京,100083 4. 天津大学精密仪器与光电子工程学院超快激光实验室,天津,300072 |
| 摘 要： | 用低温生长GaAs红外晶体材料作为饱和吸收体兼输出镜，在二极管泵浦全固态激光器上实现了调Q锁模。激光器调Q运转阈值为2W。当注入泵浦功率为3．6W时，调Q锁模开始出现。当注入泵浦功率为8．4W时，平均输出功率达到837mW，调Q包络的重复频率为100kHz，锁模脉冲的重复频率为760MHz。 |
| 关 键 词： | 调Q锁模 GaAs 低温生长 红外激光器 半导体泵浦 全固态激光器 泵浦功率 重复频率 饱和吸收体 二极管泵浦 晶体材料 输出功率 锁模脉冲 输出镜 注入 |
Study of Passively Q-switched Mode-locked Nd:YVO_4 Infrared Laser Pumped by Diode Laser with GaAs Absorber Grown at Low Temperature |
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| JIANG Qichang ZHUO Zhuang LI Jian CHENG Wenyong.Study of Passively Q-switched Mode-locked Nd:YVO_4 Infrared Laser Pumped by Diode Laser with GaAs Absorber Grown at Low Temperature[J].Infrared,2005(4):1-4,37. | |
| Authors: | JIANG Qichang ZHUO Zhuang LI Jian CHENG Wenyong |
| Abstract: | A diode-pumped passively Q-switched mode-locked Nd:YV04 laser is demonstrated by using GaAs, an infrared crystal grown at low temperature (LT-GaAs) as an absorber as well as an output coupler. The threshold power at the Q-switching and Q-switching mode locking (QML) are about 2W and 3.6W respectively. The maximum output power of 837mW was obtained at the incident pump power of 8.4W. The Q-switch envelope train with a repetition rate of - 100kHz and the mode-locked pulse train with a repetition rate of - 760 MHz were achieved. |
| Keywords: | diode-pumped infrared laser Nd:YVO4 GaAs grown at low temperature Q- switched mode-locking |
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