ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy |
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| Authors: | F X Xiu Z Yang D T Zhao J L Liu K A Alim A A Balandin M E Itkis R C Haddon |
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| Affiliation: | (1) Quantum Structures Laboratory, Department of Electrical Engineering, University of California, 92521 Riverside, CA;(2) Nano-Device Laboratory, Department of Electrical Engineering, University of California, 92521 Riverside, CA;(3) Center for Nanoscale Science and Engineering, Departments of Chemistry and Chemical & Environmental Engineering, University of California, 92521 Riverside, CA |
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| Abstract: | Low-temperature (LT) buffer-layer techniques were employed to improve the crystalline quality of ZnO films grown by molecular-beam
epitaxy (MBE). Photoluminescence (PL) spectra show that CdO, as a hetero-buffer layer with a rock-salt structure, does not
improve the quality of ZnO film grown on top. However, by using ZnO as a homo-buffer layer, the crystalline quality can be
greatly enhanced, as indicated by PL, atomic force microscopy (AFM), x-ray diffraction (XRD), and Raman scattering. Moreover,
the buffer layer grown at 450°C is found to be the best template to further improve the quality of top ZnO film. The mechanisms
behind this result are the strong interactions between point defects and threading dislocations in the ZnO buffer layer. |
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| Keywords: | ZnO buffer layer atomic force microscopy (AFM) photoluminescence (PL) x-ray diffraction (XRD) Raman scattering |
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