Infrared reflectivity studies of gax in1-x asy p1-y quaternary compounds |
| |
Authors: | C Pickering |
| |
Affiliation: | (1) Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs., UK |
| |
Abstract: | Reflectivity spectra have been measured on GaxIn1-xASyP1-y quaternary alloys, lattice-matched to InP substrates, covering the complete composition range from y = 0 (InP) to y = 1 (Ga0.47 In0.53 As). The spectra have been analysed to obtain parameters of both the free carriers and lattice vibrations. The reflectivity
method has been used to measure the carrier density and mobility, the relatively low mobilities obtained confirming the electrical
measurements explained previously by the presence of strong alloy scattering in this system. Four phonon modes, corresponding
to InAs-, GaAs-, InP- and GaP-like vibrations, were observed over most of the composition range, except for y ≲ 0.25 where
the GaAs mode was not observed and the GaP mode was a weak mode within the reststrahlen band of the InP mode. Thus the behaviour
of the system may be termed "two"-four mode. The oscillator strengths of the four modes are consistent with this behaviour
and their variation may be explainable by assuming that GaxIn1-xASyP1-y is a random alloy. |
| |
Keywords: | reflectivity GaInAsP free carriers phonons |
本文献已被 SpringerLink 等数据库收录! |
|