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一种具有平顶陡边响应的长波长光探测器
引用本文:范鑫烨,黄永清,段晓峰,周英飞,蔡世伟,孙瑾,王琦,张霞,郭欣,任晓敏.一种具有平顶陡边响应的长波长光探测器[J].光电子.激光,2012(4):615-619.
作者姓名:范鑫烨  黄永清  段晓峰  周英飞  蔡世伟  孙瑾  王琦  张霞  郭欣  任晓敏
作者单位:北京邮电大学信息光子学与光通信国家重点实验室;北京邮电大学信息光子学与光通信国家重点实验室;北京邮电大学信息光子学与光通信国家重点实验室;北京邮电大学信息光子学与光通信国家重点实验室;北京邮电大学信息光子学与光通信国家重点实验室;北京邮电大学信息光子学与光通信国家重点实验室;北京邮电大学信息光子学与光通信国家重点实验室;北京邮电大学信息光子学与光通信国家重点实验室;北京邮电大学信息光子学与光通信国家重点实验室;北京邮电大学信息光子学与光通信国家重点实验室
基金项目:国家“973”计划(2010CB327600);国家自然科学基金(61020106007);中央高校基本科研业务费专项资金(BUPT2011RC0403);高等学校学科创新引智计划(B07005);教育部长江学者和创新团队发展计划(IRT0609)资助项目
摘    要:在PIN型光探测器的基础上制备了一种适用于波分复用系统的具有平顶陡边响应的长波长光探测器。利用低压金属有机化学气相沉积(LP-MOCVD)设备在GaAs衬底上二次外延生长了具有台阶结构的GaAs/AlGaAs滤波腔和InP基PIN光探测器。高质量的GaAs/InP异质外延采用了低温缓冲层生长工艺;具有台阶结构的Fabry-Pérot(F-P)滤波腔采用了纳米量级台阶的制备方法。通过理论计算优化了实现平顶陡边光谱响应特性的器件结构;并通过实验成功制备出了具有平顶陡边响应性能的光探测器,器件的工作波长位于1 549nm,峰值量子效率大于25%,0.5dB光谱响应线宽为3.9nm,3dB光谱响应线宽为4.2nm,响应速率达到17GHz。

关 键 词:光电探测器  平顶陡边响应  异质外延  长波长

A new long wavelength photodetector with flat-top and steep-edge spectral response
FAN Xin-ye,HUANG Yong-qing,DUAN Xiao-feng,ZHOU Ying-fei,CAI Shi-wei,SUN Jin,WANG Qi,ZHANG Xi,GUO Xin and REN Xiao-min.A new long wavelength photodetector with flat-top and steep-edge spectral response[J].Journal of Optoelectronics·laser,2012(4):615-619.
Authors:FAN Xin-ye  HUANG Yong-qing  DUAN Xiao-feng  ZHOU Ying-fei  CAI Shi-wei  SUN Jin  WANG Qi  ZHANG Xi  GUO Xin and REN Xiao-min
Affiliation:State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China;State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China;State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China;State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China;State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China;State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China;State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China;State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China;State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China;State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China
Abstract:A novel long-wavelength photodetector with flat-top steep-edge response has been fabricated,which can be used for wavelength division multiplexing(WDM) system.By using low pressure metal organic chemical vapor deposition(LP-MOCVD),the step-shaped GaAs/AlGaAs distributed Bragg reflector(DBR) and the InP PIN photodetector are grown on GaAs substrate,and by employing a thin low-temperature buffer layer,the high quality GaAs/InP heteroepitaxy is realized.The structure of the photodetector is optimized by theoretical simulation.This device has good performance in the flat-top passband:the 0.5 dB bandwidth is 3.9 nm and the 3 dB bandwidth is 4.2 nm.The peak quantum efficiency of 25% around 1 549 nm and the 3 dB bandwidth of 17 GHz are simultaneously obtained.
Keywords:photodetector  flat-top and steep-edge spectral response  heteroepitaxy  long wavelength
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