| MOCVD生长源流量对p型GaN薄膜特性影响的研究 |
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| 引用本文： | 韩军,冯雷,邢艳辉,邓军,徐晨,沈光地.MOCVD生长源流量对p型GaN薄膜特性影响的研究[J].光电子．激光,2012(4):708-711. |
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| 作者姓名： | 韩军 冯雷 邢艳辉 邓军 徐晨 沈光地 |
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| 作者单位： | 北京工业大学电子信息与控制工程学院;北京工业大学电子信息与控制工程学院;北京工业大学电子信息与控制工程学院;北京工业大学电子信息与控制工程学院;北京工业大学电子信息与控制工程学院;北京工业大学电子信息与控制工程学院 |
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| 基金项目： | 国家高技术研究发展“863”计划(2008AA03Z402);国家自然科学基金(61107025);北京市自然科学基金(4102003,4112006,4092007)资助项目 |
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| 摘 要： | 利用金属有机物化学气相淀积(MOCVD)技术在蓝宝石衬底上生长p型GaN:Mg薄膜,对不同二茂镁(CP2Mg)流量和Ⅴ族和Ⅲ族摩尔(Ⅴ/Ⅲ)比生长的p型GaN:Mg薄膜特性进行研究。研究表明,增加Ⅴ/Ⅲ比,可以降低螺旋位错密度,提高p型GaN晶体质量。当Ⅴ/Ⅲ比为3 800时,Cp2Mg流量最高为170sccm,获得p型GaN(002)面峰值半高宽(FWHM)最窄为232"。同时研究发现,单纯提高Ⅴ/Ⅲ比对降低刃型位错影响较不明显。
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| 关 键 词： | 金属有机物气相淀积(MOCVD) p型氮化镓(CaN) X射线双晶衍射(DCXRD) 原子力显微镜(AFM) |
Investigation of effects of source flux on the properties of p-GaN flim grown by MOCVD |
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| HAN Jun,FENG Lei,XING Yan-hui,DENG Jun,XU Chen and SHEN Guang-di.Investigation of effects of source flux on the properties of p-GaN flim grown by MOCVD[J].Journal of Optoelectronics·laser,2012(4):708-711. |
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| Authors: | HAN Jun FENG Lei XING Yan-hui DENG Jun XU Chen and SHEN Guang-di |
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| Affiliation: | College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,China;College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,China;College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,China;College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,China;College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,China;College of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,China |
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| Abstract: | GaN:Mg films have been grown on sapphire at low temperature by metal-organic chemical vapor deposition(MOCVD),and the properties of p-GaN:Mg films with different CP2Mg source fluxes and mol ratios of Ⅴ and Ⅲ(Ⅴ/Ⅲ) are studied.The results show that the screw dislocation density is decreased under increasing Ⅴ/Ⅲ ratio,and the quality of p-GaN crystal is improved.And when the Ⅴ/Ⅲ ratio is 3 800,the CP2Mg flux is up to 170 sccm,and the p-GaN film,whose narrower full width at half maximum(FWHM) of(002) plane is 232",is obtained.It also shows that the effects on decreasing edge dislocation only by increasing Ⅴ/Ⅲ ratio are not obvious. |
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| Keywords: | metal-organic chemical vapor deposition(MOCVD) p-GaN double-crystal X-ray diffraction(DCXRD) atomic force microscopy(AFM) |
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