| 柔性衬底硅基太阳电池ZAO透明导电膜的研究 |
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| 引用本文： | 王雅欣,裴志军,王爽,李彤,张军,徐建萍,蔡宏琨,张德贤.柔性衬底硅基太阳电池ZAO透明导电膜的研究[J].光电子．激光,2012(5):928-932. |
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| 作者姓名： | 王雅欣 裴志军 王爽 李彤 张军 徐建萍 蔡宏琨 张德贤 |
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| 作者单位： | 天津职业技术师范大学电子工程学院;天津职业技术师范大学电子工程学院;天津职业技术师范大学电子工程学院;天津职业技术师范大学电子工程学院;天津职业技术师范大学电子工程学院;天津理工大学材料物理所;南开大学信息学院;南开大学信息学院 |
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| 基金项目： | 国家自然科学基金(10904109);天津市自然科学基金(09JCYBJC27300);天津市高校科技发展基金(20110711),天津市高校科技发展基金(20100712)资助项目 |
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| 摘 要： | 采用孪生对靶直流磁控溅射的方法,在室温下制备了ZnO:Al(ZAO)薄膜材料,将其应用于柔性衬底非晶硅薄膜太阳电池的窗口电极。通过调整Ar气流量(1.67×10-7 m3/s～8.33×10-7 m3/s),优化了ZAO薄膜的结构、成份及光电性能。得到如下结论:理想的Ar气流量为3.33×10-7 m3/s,此时ZAO薄膜具有较高的晶化率和C轴择优取向,薄膜的霍尔电阻率达为4.26×10-4Ω.cm,载流子浓度达到1.8×1021cm-3,可见光波长范围内的光学透过率达到85%以上。将优化后的ZAO薄膜用于柔性衬底非晶硅薄膜太阳电池的窗口电极,转化效率达到了4.26%。
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| 关 键 词： | 柔性衬底 氢化非晶硅太阳电池 磁控溅射 ZAO薄膜 Ar气流量 |
Research on ZAO transparent conducting films for flexible substrate Si-based solar cells |
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| WANG Ya-xin,PEI Zhi-jun,WANG Shuang,LI Tong,ZHANG Jun,XU Jian-ping,CAI Hong-kun and ZHANG De-xian.Research on ZAO transparent conducting films for flexible substrate Si-based solar cells[J].Journal of Optoelectronics·laser,2012(5):928-932. |
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| Authors: | WANG Ya-xin PEI Zhi-jun WANG Shuang LI Tong ZHANG Jun XU Jian-ping CAI Hong-kun and ZHANG De-xian |
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| Affiliation: | College of Electronic Engineering,Tianjin University of Technology and Education,Tianjin 300222,China;College of Electronic Engineering,Tianjin University of Technology and Education,Tianjin 300222,China;College of Electronic Engineering,Tianjin University of Technology and Education,Tianjin 300222,China;College of Electronic Engineering,Tianjin University of Technology and Education,Tianjin 300222,China;College of Electronic Engineering,Tianjin University of Technology and Education,Tianjin 300222,China;Institute of Material Physics,Tianjin University of Technology,Tianjin 300384,China;College of Information Technical Science,Nankai University,Tianjin 300071,China;College of Information Technical Science,Nankai University,Tianjin 300071,China |
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| Abstract: | In this paper,ZnO:Al(ZAO) films are deposited by using twin-target DC magnetron sputtering at room temperature,which are used as the window electrodes of flexible substrate a-Si:H solar cells.ZAO films′ structure,composition and photo-electronic properties are optimized by adjusting the Ar flow parameter from 1.67×10-7m3/s to 8.33×10-7m3/s.The experimental results show that the ideal Ar flow is 3.33×10-7m3/s.The optimized ZAO films with high crystallization structure and c-axis orientation are obtained.The films′ Hall resistivity is 4.26×10-4 Ω·cm,the carrier concentration is 1.8×1021 cm-3,and the visible region light transmittance is over 85%.Using the ZAO films in the window electrodes of flexible substrate a-Si:H solar cells,the conversion efficiency is extended to 4.26%. |
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| Keywords: | flexible substrate a-Si:H solar cell magnetron sputtering ZAO thin film Ar flow |
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