Ultralow-threshold-current lasing in inversion channel lasers |
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Authors: | Taylor GW Claisse PR Doctor DP Cooke PW |
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Affiliation: | AT&T Bell Lab., Holmdel, NJ; |
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Abstract: | A new regime of semiconductor laser operation was observed in quantum-well inversion channels of double heterostructure optoelectronic switches. The quantum-well active region operated with substantial excess negative charge imbalance due to the proximity of a high-density depleted donor charge sheet. Threshold current densities as low as 15 A/cm2 in as-cleaved 400-μm-long devices were measured, and unusual high-frequency operation under low power operation was observed. These qualities may be of great significance for optical interconnections and optoelectronic integrated circuits |
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