首页 | 本学科首页   官方微博 | 高级检索  
     

氢原子侵蚀作用的研究
引用本文:李兴无,耿东生.氢原子侵蚀作用的研究[J].微细加工技术,1995(4):25-29.
作者姓名:李兴无  耿东生
作者单位:西北工业大学材料科学与工程系
摘    要:通过热力学计算和动力学分析,研究了热丝CVD金刚石薄膜沉积过程中,氢原子对石墨相和金刚石相的侵蚀作用。结果表明;当衬底温度在823K-1273K间变化时,氢原子和石墨相反应的表观活化能小于氢原子和金刚石相反应的表观活化能,这是氢原子更易侵蚀石墨相的原因所在。

关 键 词:金刚石薄膜  氢原子  侵蚀  化学气相沉积

INVESTIGATION ON ATOMIC HYDROGEN ETCHING IN FILAMENT-ASSISTED CVD DIAMOND FILMS
Li Xingwu,Geng Dongsheng,Zhang Guifeng,Zheng Xiulin.INVESTIGATION ON ATOMIC HYDROGEN ETCHING IN FILAMENT-ASSISTED CVD DIAMOND FILMS[J].Microfabrication Technology,1995(4):25-29.
Authors:Li Xingwu  Geng Dongsheng  Zhang Guifeng  Zheng Xiulin
Abstract:Based on thermodynamic calculation and kinetic analyses, the etching effectof hydrogen atom to graphite and diamond phases duririg the deposition processof diamond films by filament-assisted CVD have been investigated. The calcula- tion and experimental results show that the etch rate of active H to graphitic car-bon phase is higher then that to diamond phase when the substrate temperatureis from 823K to 1273K. The fundamental reason lies in the apparent activationenergy of reactions between hydrogen atom and graphitic phase is smaller thanbetween hydrogen atom and diamond phase.
Keywords:diamond films  filament-assisted CVD  hydrogen etching  
本文献已被 CNKI 维普 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号