Behavioral modeling of the IGBT using the Hammerstein configuration |
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Authors: | Hsu J.-T. Ngo K.D.T. |
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Affiliation: | Dept. of Electr. Eng., Florida Univ., Gainesville, FL; |
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Abstract: | The Hammerstein model configuration, which includes a nonlinear static block followed by a linear dynamic block, is applied to model the static and dynamic characteristics of the insulated gate bipolar transistor (IGBT). Using least-squares methods, the parameters in the behavioral model can be extracted from the electrical measurements of physical devices or from the circuit simulations of physics-based models. A single set of extracted parameters has been found to yield satisfactory efficiency and accuracy for the tested hard- and soft-switched converters under prescribed ranges of operating conditions |
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