Relationship between the oxidation resistance and the high-temperature strength of silicon carbide materials |
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Authors: | Yu G Gogotsi V A Lavrenko |
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Affiliation: | (1) Kiev Polytechnic Institute, USSR |
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Abstract: | Conclusions Oxidation is the reason for the decrease in the ultimate strength of the self-bonded silicon carbide at temperatures exceeding 1000°C.Recrystallized silicon carbide possesses high oxidation resistance and retains its initial strength up to 1400°C.Translated from Ogneupory, No. 5, pp. 25–28, May, 1985. |
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