| 薄膜金属化LTCC基板的薄膜阻碍层对共晶焊的影响 |
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| 引用本文： | 吴申立. 薄膜金属化LTCC基板的薄膜阻碍层对共晶焊的影响[J]. 电子工艺技术, 2001, 22(2): 71-73 |
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| 作者姓名： | 吴申立 |
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| 作者单位： | 信息产业部电子第四十三研究所, |
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| 摘 要： | 讨论了LTCC工在板薄膜金属化技术中，有效阻碍层的选择对基板共晶焊的影响。实验结果表明，Ti/Ni是一种高可靠性的阻碍层，而且Ti/Ni/Au也是一种较理想的LTCC基板薄膜金属化结构。
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| 关 键 词： | LTCC基板 薄膜金属化 共晶焊 阻碍层 剪切强度 |
| 文章编号： | 1001-3474(2001)02-0071-03 |
| 修稿时间： | 2000-11-20 |
Effectiveness of Barrier Metals of the Thin-film Metalized LTCC Substrates for Eutectic Solder Bumps |
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| WU Shen-li. Effectiveness of Barrier Metals of the Thin-film Metalized LTCC Substrates for Eutectic Solder Bumps[J]. Electronics Process Technology, 2001, 22(2): 71-73 |
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| Authors: | WU Shen-li |
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| Abstract: | The choose of effective barrier metals during metalizing the low temperature co-fired ceramic(LTCC) substrates in thin-film is described.By experiments the Ti/Ni is a high reliable barrier metals and also Ti/Ni/Au is an ideal thin-film metalized structure for LTCC substrates. |
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| Keywords: | LTCC substrate Thin-film metalized Eutectic solder bumps Barrier metal Shear strength |
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