Selective growth of ZnO nanorods on SiO2/Si substrates using a graphene buffer layer |
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Authors: | Won Mook Choi Kyung-Sik Shin Hyo Sug Lee Dukhyun Choi Kihong Kim Hyeon-Jin Shin Seon-Mi Yoon Jae-Young Choi Sang-Woo Kim |
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Affiliation: | (1) School of Chemistry and Chemical Engineering, Southeast University, Nanjing, 211189, People’s Republic of China; |
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Abstract: | A promising strategy for the selective growth of ZnO nanorods on SiO2/Si substrates using a graphene buffer layer in a low temperature solution process is described. High densities of ZnO nanorods were grown over a large area and most ZnO nanorods were vertically well-aligned on graphene. Furthermore, selective growth of ZnO nanorods on graphene was realized by applying a simple mechanical treatment, since ZnO nanorods formed on graphene are mechanically stable on an atomic level. These results were confirmed by first principles calculations which showed that the ZnO-graphene binding has a low destabilization energy. In addition, it was found that ZnO nanorods grown on SiO2/Si with a graphene buffer layer have better optical properties than ZnO nanorods grown on bare SiO2/Si. The nanostructured ZnO-graphene materials have promising applications in future flexible electronic and optical devices. |
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Keywords: | Graphene ZnO nanorod heterojunction selective growth solution |
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