| 不对称双势垒结构中的非共振磁隧穿现象 |
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| 引用本文： | 杨富华,郑厚植,陈宗圭. 不对称双势垒结构中的非共振磁隧穿现象[J]. 半导体学报, 1990, 11(8): 565-569 |
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| 作者姓名： | 杨富华 郑厚植 陈宗圭 |
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| 作者单位： | “半导体超晶格”国家实验室中国科学院半导体研究所 北京(杨富华，郑厚植)，“半导体超晶格”国家实验室中国科学院半导体研究所 北京(陈宗圭) |
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| 摘 要： | 本文系统研究了不对称GaAs/AlAs双势垒共振隧穿结构中非共振磁隧穿谱在正反偏压方向上的特征差异,并且用渡越电子沿正反方向隧穿通过双势垒结构时在势阱中停留时间的不同合理解释了实验结果。
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| 关 键 词： | 共振隧穿 非共振磁隧穿 磁隧穿谱 声子散射 渡越时间 |
Nonresonant Magneto-Tunneling in Asymmetric GaAs/AlAs Double Barrier Structures |
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| Yang Fuhua/National Laboratory for Superlattice and Related Microstructures and Institute of Semiconductors,Academia Sinica,P. O. Box ,Beijing. ChinaZheng Houzhi/National Laboratory for Superlattice and Related Microstructures and Institute of Semiconductors,Academia Sinica,P. O. Box ,Beijing. ChinaChen Zonggui/National Laboratory for Superlattice and Related Microstructures and Institute of Semiconductors,Academia Sinica,P. O. Box ,Beijing. China. Nonresonant Magneto-Tunneling in Asymmetric GaAs/AlAs Double Barrier Structures[J]. Chinese Journal of Semiconductors, 1990, 11(8): 565-569 |
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| Authors: | Yang Fuhua/National Laboratory for Superlattice Related Microstructures Institute of Semiconductors Academia Sinica P. O. Box Beijing. ChinaZheng Houzhi/National Laboratory for Superlattice Related Microstructures Institute of Semiconductors Academia Sinica P. O. Box Beijing. ChinaChen Zonggui/National Laboratory for Superlattice Related Microstructures Institute of Semiconductors Academia Sinica P. O. Box Beijing. China |
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| Affiliation: | Yang Fuhua/National Laboratory for Superlattice and Related Microstructures and Institute of Semiconductors,Academia Sinica,P. O. Box 912,Beijing. ChinaZheng Houzhi/National Laboratory for Superlattice and Related Microstructures and Institute of Semiconductors,Academia Sinica,P. O. Box 912,Beijing. ChinaChen Zonggui/National Laboratory for Superlattice and Related Microstructures and Institute of Semiconductors,Academia Sinica,P. O. Box 912,Beijing. China |
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| Abstract: | The characteristic differences in nonresonant magneto-tunneling processes measured from anumber of asymmetric GaAs/AlAs double-barrier resonant-tunneling structures in two oppositebiases have systemmatically been studied, and ascribed to the different dwell times of traversingelectrons in the well as they tunnel along two opposite directions. |
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| Keywords: | Resonant Tunneling Nonresonant Magneto-Tunneling Magneto-Tunneling spectra Phonon scattering Dwell time |
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