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SiH4/C2H4体系激光合成SiC超细粉
引用本文:左都罗,李道火.SiH4/C2H4体系激光合成SiC超细粉[J].无机材料学报,1995,10(3):301-306.
作者姓名:左都罗  李道火
作者单位:华中理工大学激光加工国家工程研究中心(左都罗,李适民,许振鄂,文捷),中国科学院安徽光学精密机械研究所(李道火,刘宗才)
摘    要:本文报道了SiH4/C2H4体系激光合成SiC超细粉研究及对合成的SiC超细粉进行的TEM(TED)、XRD、FTIR、XPS及Raman散射等测试分析。在部分样品中发现了SiC空心颗粒,讨论了SiC超细粉的成核成长规律,得出了一些有价值的新结果:SiC超细粉的合成由Si成核生长和碳化组成;反应温度较高时,为获得接近化学计量化的SiC超细粉,要求有较高的源气C/Si比,并且高的C/Si比有利于降低

关 键 词:激光合成  超细粉  陶瓷  氢化硅  乙烯  碳化硅

Laser Synthesis of SiC Ultrafine Powders from SiH_4/C_2H_4 System
Zuo Duluo, Li Shimin, Xu Zhene, Wen Jie.Laser Synthesis of SiC Ultrafine Powders from SiH_4/C_2H_4 System[J].Journal of Inorganic Materials,1995,10(3):301-306.
Authors:Zuo Duluo  Li Shimin  Xu Zhene  Wen Jie
Abstract:Laser synthesis of SiC ultrafine powders from SiH4/C2H4 and characterization of the samples by TEM(TED), XRD, FTIR, XPS and Raman scatter were reported in the paper. SiC hollow particles were formed in some samples. The synthesis process was discussed in detail, and some new results evaluated:The synthesis of SiC powders consisted of the prior nucleation and growth of silicon and the succeeding carbonization, higher C/Si ratio in the source was necessary to synthesize near stoichiometric SiC powders when reaction temperatur became higher, and it also favored to lower contamination of oxygen.
Keywords:laser synthesis  SiC  ultrafine powders
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