The effects of fluorine passivation on polysilicon thin-filmtransistors |
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Authors: | Horng Nan Chern Chung Len Lee Tan Fu Lei |
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Affiliation: | Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu; |
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Abstract: | The fluorine implantation on polysilicon was found to improve the characteristics of polysilicon thin-film transistors (TFT's). The fluorine passivates the trap states within the polysilicon channel, as compared with the H2-plasma passivation. The fluorine implantation passivates more uniformly both the band tail-states and midgap deep-state, while the H2-plasma treatment is more effective to passivate deep states than tail states. A fluorine-implanted device can be further improved its performance if an H2-plasma treatment is applied. In contrast to the H2 -plasma passivation, the fluorine passivation improves the device hot-carrier immunity. Combining the fluorine passivation and H2 -plasma passivation, a high performance TFT with a high hot-carrier immunity can be obtained |
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