Eutectic bonding of Al-based high aspect ratio microscale structures

Metal-based microelectromechanical systems (MEMS) have important advantages over Si-based MEMS. To form any functional metal-based microdevice from metallic high-aspect-ratio microscale structures (HARMS), proper assembly and packaging are required. In this paper, we report successful eutectic bonding of Al-based HARMS using Al–Ge intermediate layers. A series of Al–Ge composite thin films were vapor deposited. Their composition and micro-/nano-scale structure were characterized. The morphology of bonded Al structures was examined, including the morphology of separated surfaces.