Characterization of pulsed laser deposited hydrogenated amorphous silicon films by spectroscopic ellipsometry |
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| Authors: | Istvá n Hanyecz,Judit BudaiEdit Szilá gyi,Zsolt Tó th |
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| Affiliation: | a University of Szeged, Department of Optics and Quantum Electronics, H-6701 Szeged, P.O. Box 406, Hungaryb KFKI Research Institute for Particle and Nuclear Physics, H-1525 Budapest, P.O. Box 49, Hungaryc Research Group on Laser Physics of the Hungarian Academy of Sciences, H-6701 Szeged, P.O. Box 406, Hungary |
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| Abstract: | The wide absorption band of hydrogenated amorphous silicon (a-Si:H) is being realized as a key component of solar cells on glass. In this study, a-Si:H films were prepared by reactive pulsed laser deposition onto silicon and glass substrates. Ellipsometry showed that the optical properties of the films are effectively independent on the choice of substrate. According to the optical properties, the character of the films changes from amorphous silicon to dielectric as the hydrogen background pressure increases from 0 to 25 Pa. This observation was attributed to oxygen incorporation indicated by Rutherford Backscattering Spectrometry. Furthermore, a refractive index gradient in depth was revealed, which was attributed to the oxygen concentration gradient. |
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| Keywords: | Hydrogenated silicon Spectroscopic ellipsometry Backscattering spectrometry Pulsed laser deposition |
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