| 一种新型D-RESURF埋栅SOI LDMOS |
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| 引用本文： | 廖红,张伟,罗小蓉,张波,李肇基,顾晶晶. 一种新型D-RESURF埋栅SOI LDMOS[J]. 微电子学, 2008, 38(6) |
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| 作者姓名： | 廖红 张伟 罗小蓉 张波 李肇基 顾晶晶 |
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| 作者单位： | 电子科技大学,电子薄膜与集成器件国家重点实验室,成都,610054 |
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| 基金项目： | 国家自然科学基金重点资助项目 |
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| 摘 要： | 提出了一种新型D-RESURF埋栅SOI LDMOS (EGDR-SOI LDMOS)结构,其栅电极位于P-body区的下面,可以在扩展的埋栅电极处形成多数载流子的积累层;同时,采用Double- RESURF技术,在漂移区中引入两区的P降场层,有效降低了器件的比导通电阻,并提高了器件的击穿电压.采用二维数值仿真软件MEDICI,对器件的扩展栅电极、降场层进行了优化设计.结果表明,相对于普通SOI LDMOS,该结构的比导通电阻下降了78%,击穿电压上升了22%.
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| 关 键 词： | 功率器件 埋栅 |
A Novel D-RESURF SOI LDMOS with Embedded Gate |
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| LIAO Hong,ZHANG Wei,LUO Xiao-rong,ZHANG Bo,LI Zhao-ji,GU Jing-jing. A Novel D-RESURF SOI LDMOS with Embedded Gate[J]. Microelectronics, 2008, 38(6) |
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| Authors: | LIAO Hong ZHANG Wei LUO Xiao-rong ZHANG Bo LI Zhao-ji GU Jing-jing |
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| Affiliation: | LIAO Hong ZHANG Wei LUO Xiaorong ZHANG Bo LI Zhaoji GU Jingjing (State Key Lab of Elec.Thin Films , Integr.Dev.,Univ.of Elec.Sci., Technol.of China,Chengdu 610054,P.R.China) |
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| Abstract: | A novel D-RESURF SOI LDMOS structure with embedded gate(EGDR-SOI LDMOS)was proposed. The gate of the structure was located under P-body region,leading to majority carrier's accumulation on the side wall of the extended gate.A P-top layer with two zones was introduced into drift region,which reduced the specific on-resistance and increased the breakdown voltage effectively.The extended gate and P-top layer were optimized by using 2-D MEDICI.Results indicated that the specific on-resistance decreased by 78%an... |
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| Keywords: | Double RESURF SOI LDMOS |
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